Algebraic Topology, Barcelona 1986 by J. Aguade, R. Kane

By J. Aguade, R. Kane

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1 The Ginzburg-Landau equations . . . . . . . . . . . 2 The Bogomol’nyi identities . . . . . . . . . . . . 3 superconducting billiard 872 The zero current line . . . . . . . . . . . . . . 873 A selection mechanism and topological phase transitions . . . . 874 A geometrical expression of the Gibbs potential for finite Systems . 874 Seminar 4. T. Chalker 879 1 Introduction 881 2 Scaling theory and localisation transitions 882 xxxiv 3 The plateau transitions as quantum critical points 885 4 Single particle models 887 5 Numerical studies 890 6 Discussion and outlook 892 Seminar 5.

5 The Weitzenb¨ ock formula . . . . . . . . . . . . . . . . . . . . . . . . . 860 860 861 862 865 869 . . . . . . . . . . 1 The Ginzburg-Landau equations . . . . . . . . . . . 2 The Bogomol’nyi identities . . . . . . . . . . . . 3 superconducting billiard 872 The zero current line . . . . . . . . . . . . . . 873 A selection mechanism and topological phase transitions . . . . 874 A geometrical expression of the Gibbs potential for finite Systems .

Layer structure of a modulation-doped GaAs/AlGaAs heterojunction grown by molecular beam epitaxy (after Ref. [15]). The measured magnetotransport data for this sample are shown in Figure 1. A measure of the electronic “quality” of a 2DES is its low-temperature mobility, µ. Over the years, the mobility of modulation-doped GaAs/AlGaAs heterostructures has improved tremendously and the record stands at about 107 cm2 /Vs for a 2DES density (n) of ∼ 2 × 1011 cm−2 , implying a mean-free-path of tens of microns [17].

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