Aspects topologiques de la physique en basse dimension = by A. Comtet, T. Jolicoeur, S. Ouvry, F. David

By A. Comtet, T. Jolicoeur, S. Ouvry, F. David

The ebook includes the labored out lecture notes of the classes brought on the summer time university in Les Houches. They handle graduate scholars and are of curiosity for researchers besides. The publication can be utilized as an creation into 3 heavily comparable fields: anyons and fractional records, fractional quantum corridor impression and knot concept. The theoretical papers are sometimes accomplished via experiences on experimental suggestions, and in addition to of physics a few program to organic structures are available.

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Additional info for Aspects topologiques de la physique en basse dimension = Topological aspects of low dimensional systems: Ecole de Physique des Houches - UJF & INPG - Grenoble, Les Houches, Session LXIX, 7-31 July 1998

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1 The Ginzburg-Landau equations . . . . . . . . . . . 2 The Bogomol’nyi identities . . . . . . . . . . . . 3 superconducting billiard 872 The zero current line . . . . . . . . . . . . . . 873 A selection mechanism and topological phase transitions . . . . 874 A geometrical expression of the Gibbs potential for finite Systems . 874 Seminar 4. T. Chalker 879 1 Introduction 881 2 Scaling theory and localisation transitions 882 xxxiv 3 The plateau transitions as quantum critical points 885 4 Single particle models 887 5 Numerical studies 890 6 Discussion and outlook 892 Seminar 5.

5 The Weitzenb¨ ock formula . . . . . . . . . . . . . . . . . . . . . . . . . 860 860 861 862 865 869 . . . . . . . . . . 1 The Ginzburg-Landau equations . . . . . . . . . . . 2 The Bogomol’nyi identities . . . . . . . . . . . . 3 superconducting billiard 872 The zero current line . . . . . . . . . . . . . . 873 A selection mechanism and topological phase transitions . . . . 874 A geometrical expression of the Gibbs potential for finite Systems .

Layer structure of a modulation-doped GaAs/AlGaAs heterojunction grown by molecular beam epitaxy (after Ref. [15]). The measured magnetotransport data for this sample are shown in Figure 1. A measure of the electronic “quality” of a 2DES is its low-temperature mobility, µ. Over the years, the mobility of modulation-doped GaAs/AlGaAs heterostructures has improved tremendously and the record stands at about 107 cm2 /Vs for a 2DES density (n) of ∼ 2 × 1011 cm−2 , implying a mean-free-path of tens of microns [17].

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